Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / SMUN5113DW1T1G
Manufacturer Part Number | SMUN5113DW1T1G |
---|---|
Future Part Number | FT-SMUN5113DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SMUN5113DW1T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 187mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMUN5113DW1T1G Weight | Contact Us |
Replacement Part Number | SMUN5113DW1T1G-FT |
NSBC124XDXV6T1
ON Semiconductor
NSBC124XPDXV6T1G
ON Semiconductor
NSBC124XPDXV6T5G
ON Semiconductor
NSBC143EDXV6T1
ON Semiconductor
NSBC143EPDXV6T1
ON Semiconductor
NSBC143TDXV6T1
ON Semiconductor
NSBC143TPDXV6T1
ON Semiconductor
NSBC143TPDXV6T5G
ON Semiconductor
NSBC143ZDXV6T1
ON Semiconductor
NSBC143ZPDXV6T5
ON Semiconductor
AT6005A-2AI
Microchip Technology
LFE3-35EA-7LFTN256I
Lattice Semiconductor Corporation
A1440A-1VQG100I
Microsemi Corporation
EP4CE40F23C8L
Intel
EP2AGX125DF25I5
Intel
EP3C5M164I7N
Intel
5AGZME5H3F35I4N
Intel
XC5VTX150T-1FFG1156I
Xilinx Inc.
LFXP2-17E-6QN208I
Lattice Semiconductor Corporation
ICE40HX8K-CM225
Lattice Semiconductor Corporation