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Vishay Siliconix SQJ412EP-T1_GE3

Name: SQJ412EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ412EP-T1_GE3
Price: 1.008064 USD
Availability: InStock
Rating: 4.9 (314 reviews)

MFG Part Number: SQJ412EP-T1_GE3

Available Quantity: 69390 Pieces

Reference Price: USD 1.008064

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Siliconix

Brief Description: Automotive, AEC-Q101, TrenchFET® MOSFET N-CH 40V 32A PPAK SO-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SQJ412EP-T1_GE3.pdf

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SQJ412EP-T1_GE3 Specifications

Manufacturer Part Number	SQJ412EP-T1_GE3
Future Part Number	FT-SQJ412EP-T1_GE3
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, TrenchFET®
SQJ412EP-T1_GE3 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1 mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5950pF @ 20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SQJ412EP-T1_GE3 Weight	Contact Us
Replacement Part Number	SQJ412EP-T1_GE3-FT

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