Home / Products / Integrated Circuits (ICs) / Memory / TC58NYG2S0HBAI6
Manufacturer Part Number | TC58NYG2S0HBAI6 |
---|---|
Future Part Number | FT-TC58NYG2S0HBAI6 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TC58NYG2S0HBAI6 Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND (SLC) |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TC58NYG2S0HBAI6 Weight | Contact Us |
Replacement Part Number | TC58NYG2S0HBAI6-FT |
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