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Toshiba Memory America, Inc. TH58BYG2S3HBAI6

Name: TH58BYG2S3HBAI6
Brand: Toshiba Memory America, Inc.
SKU: TH58BYG2S3HBAI6
Price: 4.928 USD
Availability: InStock
Rating: 4.9 (752 reviews)

MFG Part Number: TH58BYG2S3HBAI6

Available Quantity: 27830 Pieces

Reference Price: USD 4.928

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Memory America, Inc.

Brief Description: Benand™ IC FLASH 4G PARALLEL 67VFBGA

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Memory

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TH58BYG2S3HBAI6.pdf

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TH58BYG2S3HBAI6 Specifications

Manufacturer Part Number	TH58BYG2S3HBAI6
Future Part Number	FT-TH58BYG2S3HBAI6
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Benand™
TH58BYG2S3HBAI6 Status (Lifecycle)	In Stock
Part Status	Active
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND (SLC)
Memory Size	4Gb (512M x 8)
Clock Frequency	-
Write Cycle Time - Word, Page	25ns
Access Time	25ns
Memory Interface	Parallel
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	67-VFBGA
Supplier Device Package	67-VFBGA (6.5x8)
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TH58BYG2S3HBAI6 Weight	Contact Us
Replacement Part Number	TH58BYG2S3HBAI6-FT

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