Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPN1110ENH,L1Q
Manufacturer Part Number | TPN1110ENH,L1Q |
---|---|
Future Part Number | FT-TPN1110ENH,L1Q |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | U-MOSVIII-H |
TPN1110ENH,L1Q Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 114 mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPN1110ENH,L1Q Weight | Contact Us |
Replacement Part Number | TPN1110ENH,L1Q-FT |
TK560P60Y,RQ
Toshiba Semiconductor and Storage
TJ15P04M3,RQ(S
Toshiba Semiconductor and Storage
TK10P60W,RVQ
Toshiba Semiconductor and Storage
TK11P65W,RQ
Toshiba Semiconductor and Storage
TK12P60W,RVQ
Toshiba Semiconductor and Storage
TK20P04M1,RQ(S
Toshiba Semiconductor and Storage
TK290P65Y,RQ
Toshiba Semiconductor and Storage
TK380P60Y,RQ
Toshiba Semiconductor and Storage
TK3P50D,RQ(S
Toshiba Semiconductor and Storage
TK40P03M1(T6RDS-Q)
Toshiba Semiconductor and Storage
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel