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Taiwan Semiconductor Corporation TSM061NA03CV RGG

Name: TSM061NA03CV RGG
Brand: Taiwan Semiconductor Corporation
SKU: TSM061NA03CV RGG
Price: 0.384272 USD
Availability: InStock
Rating: 4.8 (116 reviews)

MFG Part Number: TSM061NA03CV RGG

Available Quantity: 28590 Pieces

Reference Price: USD 0.384272

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Taiwan Semiconductor Corporation

Brief Description: - MOSFET N-CH 30V 66A 8PDFN

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TSM061NA03CV RGG.pdf

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TSM061NA03CV RGG Specifications

Manufacturer Part Number	TSM061NA03CV RGG
Future Part Number	FT-TSM061NA03CV RGG
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	-
TSM061NA03CV RGG Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.1 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1136pF @ 15V
FET Feature	-
Power Dissipation (Max)	44.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (3x3)
Package / Case	8-PowerWDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TSM061NA03CV RGG Weight	Contact Us
Replacement Part Number	TSM061NA03CV RGG-FT

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