Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR221N00L
Manufacturer Part Number | UNR221N00L |
---|---|
Future Part Number | FT-UNR221N00L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UNR221N00L Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR221N00L Weight | Contact Us |
Replacement Part Number | UNR221N00L-FT |
FJV4112RMTF
ON Semiconductor
MMUN2111LT1
ON Semiconductor
MMUN2113LT1
ON Semiconductor
MMUN2114LT1
ON Semiconductor
MMUN2213LT1
ON Semiconductor
MMUN2216LT1
ON Semiconductor
MMUN2232LT1
ON Semiconductor
MMUN2233LT1
ON Semiconductor
MUN2111T1
ON Semiconductor
PBRN113EK,115
NXP USA Inc.