Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR42160RA
Manufacturer Part Number | UNR42160RA |
---|---|
Future Part Number | FT-UNR42160RA |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UNR42160RA Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | 3-SSIP |
Supplier Device Package | NS-B1 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UNR42160RA Weight | Contact Us |
Replacement Part Number | UNR42160RA-FT |
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