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Vishay Semiconductor Diodes Division VS-GB200TH120N

Name: VS-GB200TH120N
Brand: Vishay Semiconductor Diodes Division
SKU: VS-GB200TH120N
Price: 377.249336 USD
Availability: InStock
Rating: 4.9 (428 reviews)

MFG Part Number: VS-GB200TH120N

Available Quantity: 96970 Pieces

Reference Price: USD 377.249336

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Semiconductor Diodes Division

Brief Description: - IGBT 1200V 360A 1136W INT-A-PAK

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - IGBTs - Modules

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: VS-GB200TH120N.pdf

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VS-GB200TH120N Specifications

Manufacturer Part Number	VS-GB200TH120N
Future Part Number	FT-VS-GB200TH120N
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	-
VS-GB200TH120N Status (Lifecycle)	In Stock
Part Status	Active
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	360A
Power - Max	1136W
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 200A
Current - Collector Cutoff (Max)	5mA
Input Capacitance (Cies) @ Vce	14.9nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
VS-GB200TH120N Weight	Contact Us
Replacement Part Number	VS-GB200TH120N-FT

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